FDMS86152 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 100V 14A/45A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 14A, 10V
Power Dissipation (Max): 2.7W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 5.66 EUR |
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Technische Details FDMS86152 onsemi
Description: MOSFET N-CH 100V 14A/45A POWER56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 14A, 10V, Power Dissipation (Max): 2.7W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 50 V.
Weitere Produktangebote FDMS86152 nach Preis ab 6.01 EUR bis 11.83 EUR
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FDMS86152 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 14A/45A POWER56 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 14A, 10V Power Dissipation (Max): 2.7W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 50 V |
auf Bestellung 5846 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMS86152 | Hersteller : onsemi / Fairchild |
MOSFET 100V N-Channel Power Trench MOSFET |
auf Bestellung 3429 Stücke: Lieferzeit 14-28 Tag (e) |
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FDMS86152 | Hersteller : ONSEMI |
Description: ONSEMI - FDMS86152 - Leistungs-MOSFET, n-Kanal, 100 V, 45 A, 0.0052 ohm, PQFN, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 45A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 125W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0052ohm |
auf Bestellung 1058 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86152 | Hersteller : ONSEMI |
Description: ONSEMI - FDMS86152 - Leistungs-MOSFET, n-Kanal, 100 V, 45 A, 0.0052 ohm, PQFN, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 45A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Verlustleistung Pd: 125W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 125W Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.0052ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0052ohm |
auf Bestellung 1058 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86152 | Hersteller : ONSEMI |
Description: ONSEMI - FDMS86152 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86152 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 14A 8-Pin QFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS86152 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 14A 8-Pin QFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMS86152 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 260A; 125W; Power56 Mounting: SMD Case: Power56 Kind of package: reel; tape Power dissipation: 125W Gate charge: 50nC Polarisation: unipolar Drain current: 45A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 11mΩ Pulsed drain current: 260A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDMS86152 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 260A; 125W; Power56 Mounting: SMD Case: Power56 Kind of package: reel; tape Power dissipation: 125W Gate charge: 50nC Polarisation: unipolar Drain current: 45A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 11mΩ Pulsed drain current: 260A |
Produkt ist nicht verfügbar |