Technische Details FDMS86152 ON Semiconductor
Description: ONSEMI - FDMS86152 - Leistungs-MOSFET, n-Kanal, 100 V, 45 A, 0.0052 ohm, PQFN, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 100V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 45A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 125W, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 125W, Bauform - Transistor: PQFN, Qualifizierungsstandard der Automobilindustrie: -, Anzahl der Pins: 8Pin(s), Produktpalette: PowerTrench, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.0052ohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.0052ohm, SVHC: No SVHC (15-Jan-2018).
Weitere Produktangebote FDMS86152 nach Preis ab 4.05 EUR bis 12.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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FDMS86152 | ON Semiconductor |
 Trans MOSFET N-CH 100V 14A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86152 | onsemi |
Description: MOSFET N-CH 100V 14A/45A POWER56 Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.7W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86152 | ON Semiconductor |
Trans MOSFET N-CH 100V 14A 8-Pin QFN EP T/R |
auf Bestellung 19715 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86152 | onsemi / Fairchild |
MOSFETs 100V N-Channel Power Trench MOSFET |
auf Bestellung 2774 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86152 | onsemi |
Description: MOSFET N-CH 100V 14A/45A POWER56 Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.7W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 100 V |
auf Bestellung 13963 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86152 | onsemi |
MOSFETs 100V N-Channel Power Trench MOSFET |
auf Bestellung 1767 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDMS86152 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 100V 14A 8-Pin PQFN EP T/R
Trans MOSFET N-CH 100V 14A 8-Pin PQFN EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 4.05 EUR |
| FDMS86152 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 14A/45A POWER56
Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 14A/45A POWER56
Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 4.13 EUR |
| FDMS86152 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 100V 14A 8-Pin QFN EP T/R
Trans MOSFET N-CH 100V 14A 8-Pin QFN EP T/R
auf Bestellung 19715 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 126+ | 5.2 EUR |
| 500+ | 4.9 EUR |
| 1000+ | 4.53 EUR |
| FDMS86152 |
|
Hersteller: onsemi / Fairchild
MOSFETs 100V N-Channel Power Trench MOSFET
MOSFETs 100V N-Channel Power Trench MOSFET
auf Bestellung 2774 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.45 EUR |
| 10+ | 7.1 EUR |
| 100+ | 5.11 EUR |
| 500+ | 5.05 EUR |
| 1000+ | 5.01 EUR |
| 3000+ | 4.27 EUR |
| FDMS86152 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 14A/45A POWER56
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Description: MOSFET N-CH 100V 14A/45A POWER56
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
auf Bestellung 13963 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.69 EUR |
| 10+ | 7.14 EUR |
| 100+ | 5.14 EUR |
| 500+ | 5.06 EUR |
| FDMS86152 |
|
Hersteller: onsemi
MOSFETs 100V N-Channel Power Trench MOSFET
MOSFETs 100V N-Channel Power Trench MOSFET
auf Bestellung 1767 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.4 EUR |
| 10+ | 8.13 EUR |
| 100+ | 5.99 EUR |
| 500+ | 5.32 EUR |
| 1000+ | 4.69 EUR |