| Anzahl | Preis |
|---|---|
| 1+ | 7.5 EUR |
| 10+ | 4.65 EUR |
| 100+ | 3.71 EUR |
| 500+ | 3.56 EUR |
| 1000+ | 3.43 EUR |
| 3000+ | 3.03 EUR |
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Technische Details FDMS86202 onsemi / Fairchild
Description: MOSFET N-CH 120V 13.5A POWER56, Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 60 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-PQFN (5x6), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.7W (Ta), 156W (Tc), Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDMS86202 nach Preis ab 3.57 EUR bis 7.87 EUR
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FDMS86202 | Hersteller : onsemi |
 Description: MOSFET N-CH 120V 13.5A POWER56Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.7W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 1924 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMS86202 | Hersteller : ON Semiconductor |
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auf Bestellung 6010 Stücke: Lieferzeit 21-28 Tag (e) |