FDMS86202ET120 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 120V 13.5/102A PWR56
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
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Technische Details FDMS86202ET120 onsemi
Description: MOSFET N-CH 120V 13.5/102A PWR56, Supplier Device Package: 8-PQFN (5x6), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.3W (Ta), 187W (Tc), Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active.
Weitere Produktangebote FDMS86202ET120 nach Preis ab 4.47 EUR bis 11.04 EUR
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FDMS86202ET120 | onsemi / Fairchild |
MOSFETs 120V N-Channel Shielded Gate PowerTrench MOSFET |
auf Bestellung 2262 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86202ET120 | onsemi |
Description: MOSFET N-CH 120V 13.5/102A PWR56 Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 8545 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86202ET120 | onsemi |
MOSFETs 120V N-Channel Shielded Gate PowerTrench MOSFET |
auf Bestellung 2217 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMS86202ET120 | ON Semiconductor |
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auf Bestellung 2980 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDMS86202ET120 |
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Hersteller: onsemi / Fairchild
MOSFETs 120V N-Channel Shielded Gate PowerTrench MOSFET
MOSFETs 120V N-Channel Shielded Gate PowerTrench MOSFET
auf Bestellung 2262 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.49 EUR |
| 10+ | 7.08 EUR |
| 100+ | 5.24 EUR |
| 1000+ | 5.23 EUR |
| 3000+ | 4.47 EUR |
| FDMS86202ET120 |
|
Hersteller: onsemi
Description: MOSFET N-CH 120V 13.5/102A PWR56
Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 120V 13.5/102A PWR56
Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 8545 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.54 EUR |
| 10+ | 7.11 EUR |
| 100+ | 5.27 EUR |
| FDMS86202ET120 |
|
Hersteller: onsemi
MOSFETs 120V N-Channel Shielded Gate PowerTrench MOSFET
MOSFETs 120V N-Channel Shielded Gate PowerTrench MOSFET
auf Bestellung 2217 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.04 EUR |
| 10+ | 6.67 EUR |
| 100+ | 5.51 EUR |
| 500+ | 5.24 EUR |
| 1000+ | 4.91 EUR |
| FDMS86202ET120 |
|
Hersteller: ON Semiconductor
auf Bestellung 2980 Stücke:
Lieferzeit 21-28 Tag (e)