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FDMS86202ET120

FDMS86202ET120 onsemi

fdms86202et120-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 120V 13.5/102A PWR56
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+5.13 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDMS86202ET120 onsemi

Description: MOSFET N-CH 120V 13.5/102A PWR56, Supplier Device Package: 8-PQFN (5x6), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.3W (Ta), 187W (Tc), Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active.

Weitere Produktangebote FDMS86202ET120 nach Preis ab 5.9 EUR bis 13.34 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
FDMS86202ET120 FDMS86202ET120 ONSEMI FAIR-S-A0002363668-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - FDMS86202ET120 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 164 Stücke:
Lieferzeit 14-21 Tag (e)
110+11.04 EUR
Mindestbestellmenge: 110 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86202ET120 FDMS86202ET120 onsemi fdms86202et120-d.pdf Description: MOSFET N-CH 120V 13.5/102A PWR56
Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 8545 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.54 EUR
10+8.46 EUR
100+6.27 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86202ET120 FDMS86202ET120 onsemi fdms86202et120-d.pdf MOSFETs 120V N-Channel Shielded Gate PowerTrench MOSFET
auf Bestellung 2124 Stücke:
Lieferzeit 10-14 Tag (e)
1+13.34 EUR
10+8.35 EUR
100+6.56 EUR
500+6.24 EUR
1000+5.9 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86202ET120 ON Semiconductor fdms86202et120-d.pdf
auf Bestellung 2980 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86202ET120 FAIR-S-A0002363668-1.pdf?t.download=true&u=5oefqw
FDMS86202ET120
Hersteller: ONSEMI
Description: ONSEMI - FDMS86202ET120 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 164 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
110+11.04 EUR
Mindestbestellmenge: 110 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86202ET120 fdms86202et120-d.pdf
FDMS86202ET120
Hersteller: onsemi
Description: MOSFET N-CH 120V 13.5/102A PWR56
Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 8545 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.54 EUR
10+8.46 EUR
100+6.27 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86202ET120 fdms86202et120-d.pdf
FDMS86202ET120
Hersteller: onsemi
MOSFETs 120V N-Channel Shielded Gate PowerTrench MOSFET
auf Bestellung 2124 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+13.34 EUR
10+8.35 EUR
100+6.56 EUR
500+6.24 EUR
1000+5.9 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86202ET120 fdms86202et120-d.pdf
Hersteller: ON Semiconductor
auf Bestellung 2980 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH