FDMS86252 ON Semiconductor
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.43 EUR |
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Technische Details FDMS86252 ON Semiconductor
Description: MOSFET N-CH 150V 4.6A/16A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc), Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V, Power Dissipation (Max): 2.5W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V.
Weitere Produktangebote FDMS86252 nach Preis ab 1.18 EUR bis 4.38 EUR
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FDMS86252 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH Si 150V 4.6A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86252 | Hersteller : onsemi |
Description: MOSFET N-CH 150V 4.6A/16A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V |
auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86252 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 150V 4.6A 8-Pin PQFN EP T/R |
auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86252 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 150V 4.6A 8-Pin PQFN EP T/R |
auf Bestellung 2905 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86252 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 150V 4.6A 8-Pin PQFN EP T/R |
auf Bestellung 1525 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86252 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 150V 4.6A 8-Pin PQFN EP T/R |
auf Bestellung 1525 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86252 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 150V 4.6A 8-Pin PQFN EP T/R |
auf Bestellung 2110 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86252 | Hersteller : onsemi / Fairchild |
MOSFETs 150V N-Channel PowerTrench MOSFET |
auf Bestellung 6133 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86252 | Hersteller : onsemi |
Description: MOSFET N-CH 150V 4.6A/16A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V |
auf Bestellung 48131 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86252 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 150V 4.6A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS86252 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 150V 4.6A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMS86252 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 69W; PQFN8 Case: PQFN8 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 150V Drain current: 16A On-state resistance: 96mΩ Type of transistor: N-MOSFET Power dissipation: 69W Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| FDMS86252 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 69W; PQFN8 Case: PQFN8 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 150V Drain current: 16A On-state resistance: 96mΩ Type of transistor: N-MOSFET Power dissipation: 69W |
Produkt ist nicht verfügbar |