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FDMS86252

FDMS86252 ON Semiconductor

fdms86252jp-d.pdf Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 150V 4.6A 8-Pin PQFN EP T/R
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
55+2.87 EUR
63+ 2.42 EUR
64+ 2.31 EUR
100+ 1.86 EUR
250+ 1.76 EUR
500+ 1.48 EUR
1000+ 1.26 EUR
Mindestbestellmenge: 55
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Technische Details FDMS86252 ON Semiconductor

Description: MOSFET N-CH 150V 4.6A/16A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc), Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V, Power Dissipation (Max): 2.5W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V.

Weitere Produktangebote FDMS86252 nach Preis ab 1.26 EUR bis 5.46 EUR

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FDMS86252 FDMS86252 Hersteller : ON Semiconductor fdms86252jp-d.pdf Trans MOSFET N-CH Si 150V 4.6A 8-Pin PQFN EP T/R
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
55+2.87 EUR
63+ 2.42 EUR
64+ 2.31 EUR
100+ 1.86 EUR
250+ 1.76 EUR
500+ 1.48 EUR
1000+ 1.26 EUR
Mindestbestellmenge: 55
FDMS86252 FDMS86252 Hersteller : onsemi fdms86252-d.pdf Description: MOSFET N-CH 150V 4.6A/16A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V
auf Bestellung 2920 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.43 EUR
10+ 4.51 EUR
100+ 3.59 EUR
500+ 3.04 EUR
1000+ 2.58 EUR
Mindestbestellmenge: 5
FDMS86252 FDMS86252 Hersteller : onsemi / Fairchild FDMS86252_D-2312432.pdf MOSFET 150V N-Channel PowerTrench MOSFET
auf Bestellung 10673 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
10+5.46 EUR
12+ 4.55 EUR
100+ 3.64 EUR
250+ 3.61 EUR
500+ 3.07 EUR
1000+ 2.6 EUR
3000+ 2.44 EUR
Mindestbestellmenge: 10
FDMS86252 FDMS86252 Hersteller : ON Semiconductor fdms86252jp-d.pdf Trans MOSFET N-CH Si 150V 4.6A 8-Pin PQFN EP T/R
Produkt ist nicht verfügbar
FDMS86252 FDMS86252 Hersteller : ON Semiconductor fdms86252jp-d.pdf Trans MOSFET N-CH Si 150V 4.6A 8-Pin PQFN EP T/R
Produkt ist nicht verfügbar
FDMS86252 Hersteller : ONSEMI fdms86252-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 69W; PQFN8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 69W
Polarisation: unipolar
Drain current: 16A
Kind of channel: enhanced
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PQFN8
On-state resistance: 96mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMS86252 FDMS86252 Hersteller : onsemi fdms86252-d.pdf Description: MOSFET N-CH 150V 4.6A/16A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V
Produkt ist nicht verfügbar
FDMS86252 Hersteller : ONSEMI fdms86252-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 69W; PQFN8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 69W
Polarisation: unipolar
Drain current: 16A
Kind of channel: enhanced
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PQFN8
On-state resistance: 96mΩ
Produkt ist nicht verfügbar