FDMS86255ET150 onsemi / Fairchild
| Anzahl | Preis |
|---|---|
| 1+ | 10.44 EUR |
| 10+ | 7.06 EUR |
| 100+ | 5.23 EUR |
| 1000+ | 4.98 EUR |
| 3000+ | 4.44 EUR |
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Technische Details FDMS86255ET150 onsemi / Fairchild
Description: MOSFET N-CH 150V 10A/63A POWER56, Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: 8-PQFN (5x6), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.3W (Ta), 136W (Tc), Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDMS86255ET150 nach Preis ab 5.12 EUR bis 11.86 EUR
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FDMS86255ET150 | onsemi |
 Description: MOSFET N-CH 150V 10A/63A POWER56Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.3W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 257 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86255ET150 | onsemi |
MOSFETs N-Channel Shielded Gate PowerTrench MOSFET |
auf Bestellung 991 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMS86255ET150 |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 10A/63A POWER56
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 150V 10A/63A POWER56
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 257 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 11.19 EUR |
| 10+ | 7.43 EUR |
| 100+ | 5.46 EUR |
| FDMS86255ET150 |
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Hersteller: onsemi
MOSFETs N-Channel Shielded Gate PowerTrench MOSFET
MOSFETs N-Channel Shielded Gate PowerTrench MOSFET
auf Bestellung 991 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 11.86 EUR |
| 10+ | 7.96 EUR |
| 100+ | 6.16 EUR |
| 500+ | 5.67 EUR |
| 1000+ | 5.28 EUR |
| 3000+ | 5.12 EUR |