FDMS86320 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 80V 10.5A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.16 EUR |
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Technische Details FDMS86320 onsemi
Description: MOSFET N-CH 80V 10.5A/22A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.5A, 10V, Power Dissipation (Max): 2.5W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V.
Weitere Produktangebote FDMS86320 nach Preis ab 0.84 EUR bis 3.87 EUR
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FDMS86320 | Hersteller : ON Semiconductor |
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FDMS86320 | Hersteller : onsemi |
Description: MOSFET N-CH 80V 10.5A/22A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.5A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V |
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FDMS86320 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 10.5A 8-Pin PQFN EP T/R |
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FDMS86320 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 10.5A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS86320 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 10.5A 8-Pin PQFN EP T/R |
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Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 160A; 69W; Power56 Pulsed drain current: 160A Power dissipation: 69W Gate charge: 41nC Polarisation: unipolar Drain current: 44A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Kind of package: reel; tape Case: Power56 On-state resistance: 19mΩ Gate-source voltage: ±20V Mounting: SMD Anzahl je Verpackung: 1 Stücke |
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| FDMS86320 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 160A; 69W; Power56 Pulsed drain current: 160A Power dissipation: 69W Gate charge: 41nC Polarisation: unipolar Drain current: 44A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Kind of package: reel; tape Case: Power56 On-state resistance: 19mΩ Gate-source voltage: ±20V Mounting: SMD |
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