FDMS86320 ON Semiconductor
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 252+ | 0.57 EUR |
| 253+ | 0.55 EUR |
| 254+ | 0.53 EUR |
| 255+ | 0.51 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.46 EUR |
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Produktbewertung abgeben
Technische Details FDMS86320 ON Semiconductor
Description: MOSFET N-CH 80V 10.5A/22A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.5A, 10V, Power Dissipation (Max): 2.5W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V.
Weitere Produktangebote FDMS86320 nach Preis ab 0.44 EUR bis 3.92 EUR
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FDMS86320 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH Si 80V 10.5A 8-Pin PQFN EP T/R |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86320 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 10.5A 8-Pin PQFN EP T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86320 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 10.5A 8-Pin PQFN EP T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86320 | Hersteller : onsemi |
Description: MOSFET N-CH 80V 10.5A/22A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.5A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86320 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 10.5A 8-Pin PQFN EP T/R |
auf Bestellung 1476 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86320 | Hersteller : onsemi / Fairchild |
MOSFETs N-Chan PowerTrench MOSFET 80V, 22A |
auf Bestellung 8264 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86320 | Hersteller : onsemi |
Description: MOSFET N-CH 80V 10.5A/22A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.5A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V |
auf Bestellung 30731 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86320 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 10.5A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS86320 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 10.5A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS86320 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 10.5A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMS86320 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 160A; 69W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 44A Pulsed drain current: 160A Power dissipation: 69W Case: Power56 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDMS86320 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 160A; 69W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 44A Pulsed drain current: 160A Power dissipation: 69W Case: Power56 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |