FDMS86320 ON Semiconductor
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 270+ | 0.53 EUR |
| 274+ | 0.5 EUR |
| 279+ | 0.48 EUR |
| 283+ | 0.45 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.4 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMS86320 ON Semiconductor
Description: MOSFET N-CH 80V 10.5A/22A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.5A, 10V, Power Dissipation (Max): 2.5W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V.
Weitere Produktangebote FDMS86320 nach Preis ab 0.38 EUR bis 3.92 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
FDMS86320 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH Si 80V 10.5A 8-Pin PQFN EP T/R |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
FDMS86320 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 10.5A 8-Pin PQFN EP T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
FDMS86320 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 10.5A 8-Pin PQFN EP T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
FDMS86320 | Hersteller : onsemi / Fairchild |
MOSFETs N-Chan PowerTrench MOSFET 80V, 22A |
auf Bestellung 8014 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
 |
FDMS86320 | Hersteller : onsemi |
Description: MOSFET N-CH 80V 10.5A/22A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.5A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
FDMS86320 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 10.5A 8-Pin PQFN EP T/R |
auf Bestellung 1476 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
FDMS86320 | Hersteller : onsemi |
Description: MOSFET N-CH 80V 10.5A/22A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.5A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V |
auf Bestellung 30731 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
 |
FDMS86320 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 10.5A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||||
|
|
FDMS86320 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 10.5A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||||
|
|
FDMS86320 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 10.5A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||||
| FDMS86320 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 160A; 69W; Power56 Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Case: Power56 Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 41nC On-state resistance: 19mΩ Drain current: 44A Gate-source voltage: ±20V Power dissipation: 69W Pulsed drain current: 160A Drain-source voltage: 80V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||||
| FDMS86320 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 160A; 69W; Power56 Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Case: Power56 Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 41nC On-state resistance: 19mΩ Drain current: 44A Gate-source voltage: ±20V Power dissipation: 69W Pulsed drain current: 160A Drain-source voltage: 80V |
Produkt ist nicht verfügbar |