FDMS86520L onsemi
Hersteller: onsemiDescription: MOSFET N CH 60V 13.5A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.42 EUR |
Produktrezensionen
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Technische Details FDMS86520L onsemi
Description: MOSFET N CH 60V 13.5A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 8.2mOhm @ 13.5A, 10V, Power Dissipation (Max): 2.5W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 30 V.
Weitere Produktangebote FDMS86520L nach Preis ab 1.46 EUR bis 4.61 EUR
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FDMS86520L | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R |
auf Bestellung 1249 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86520L | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R |
auf Bestellung 1306 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86520L | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86520L | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86520L | Hersteller : onsemi / Fairchild |
MOSFETs 60V N-Channel PowerTrench MOSFET |
auf Bestellung 17574 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86520L | Hersteller : onsemi |
Description: MOSFET N CH 60V 13.5A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 13.5A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 30 V |
auf Bestellung 4582 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86520L | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS86520L | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS86520L | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMS86520L | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 69W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 22A Pulsed drain current: 60A Power dissipation: 69W Case: Power56 Gate-source voltage: ±20V On-state resistance: 11.8mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDMS86520L | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 69W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 22A Pulsed drain current: 60A Power dissipation: 69W Case: Power56 Gate-source voltage: ±20V On-state resistance: 11.8mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |