FDMS86520L ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.56 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
3000 Stücke
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Technische Details FDMS86520L ON Semiconductor
Description: MOSFET N CH 60V 13.5A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 8.2mOhm @ 13.5A, 10V, Power Dissipation (Max): 2.5W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 30 V.
Weitere Produktangebote FDMS86520L nach Preis ab 1.25 EUR bis 5.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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FDMS86520L | ON Semiconductor |
 Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86520L | onsemi |
Description: MOSFET N CH 60V 13.5A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 13.5A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 30 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86520L | ON Semiconductor |
Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R |
auf Bestellung 501 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86520L | ON Semiconductor |
Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R |
auf Bestellung 999 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86520L | ON Semiconductor |
Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86520L | onsemi |
MOSFETs 60V N-Channel PowerTrench MOSFET |
auf Bestellung 16160 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86520L | onsemi / Fairchild |
MOSFETs 60V N-Channel PowerTrench MOSFET |
auf Bestellung 16488 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86520L | onsemi |
Description: MOSFET N CH 60V 13.5A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 13.5A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 30 V |
auf Bestellung 4582 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86520L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 69W; Power56 Kind of package: reel; tape Mounting: SMD Pulsed drain current: 60A Power dissipation: 69W Gate charge: 63nC Polarisation: unipolar Drain current: 22A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: Power56 On-state resistance: 11.8mΩ |
auf Bestellung 2922 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDMS86520L |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R
Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.58 EUR |
| FDMS86520L |
|
Hersteller: onsemi
Description: MOSFET N CH 60V 13.5A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 30 V
Description: MOSFET N CH 60V 13.5A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.69 EUR |
| FDMS86520L |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R
Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R
auf Bestellung 501 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 2.67 EUR |
| 500+ | 2.37 EUR |
| FDMS86520L |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R
Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R
auf Bestellung 999 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 2.67 EUR |
| 500+ | 2.37 EUR |
| FDMS86520L |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R
Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 52+ | 3.43 EUR |
| 72+ | 2.42 EUR |
| 100+ | 1.81 EUR |
| 500+ | 1.57 EUR |
| 1000+ | 1.48 EUR |
| 3000+ | 1.25 EUR |
| FDMS86520L |
|
Hersteller: onsemi
MOSFETs 60V N-Channel PowerTrench MOSFET
MOSFETs 60V N-Channel PowerTrench MOSFET
auf Bestellung 16160 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.86 EUR |
| 10+ | 2.75 EUR |
| 100+ | 2.12 EUR |
| 500+ | 1.86 EUR |
| 1000+ | 1.77 EUR |
| 3000+ | 1.65 EUR |
| FDMS86520L |
|
Hersteller: onsemi / Fairchild
MOSFETs 60V N-Channel PowerTrench MOSFET
MOSFETs 60V N-Channel PowerTrench MOSFET
auf Bestellung 16488 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.11 EUR |
| 10+ | 2.83 EUR |
| 100+ | 1.77 EUR |
| 500+ | 1.75 EUR |
| 1000+ | 1.71 EUR |
| 3000+ | 1.57 EUR |
| FDMS86520L |
|
Hersteller: onsemi
Description: MOSFET N CH 60V 13.5A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 30 V
Description: MOSFET N CH 60V 13.5A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 30 V
auf Bestellung 4582 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.49 EUR |
| 10+ | 3.55 EUR |
| 100+ | 2.44 EUR |
| 500+ | 1.98 EUR |
| 1000+ | 1.82 EUR |
| FDMS86520L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 69W; Power56
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 69W
Gate charge: 63nC
Polarisation: unipolar
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: Power56
On-state resistance: 11.8mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 69W; Power56
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 69W
Gate charge: 63nC
Polarisation: unipolar
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: Power56
On-state resistance: 11.8mΩ
auf Bestellung 2922 Stücke:
Lieferzeit 14-21 Tag (e)