Technische Details FDMS86520L ON Semiconductor
Description: MOSFET N CH 60V 13.5A 8PQFN, Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-PQFN (5x6), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 69W (Tc), Rds On (Max) @ Id, Vgs: 8.2mOhm @ 13.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDMS86520L nach Preis ab 1.24 EUR bis 5.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDMS86520L | onsemi |
 Description: MOSFET N CH 60V 13.5A 8PQFNInput Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
FDMS86520L | ON Semiconductor |
Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R |
auf Bestellung 501 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
FDMS86520L | ON Semiconductor |
Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R |
auf Bestellung 999 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
FDMS86520L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 69W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 22A Pulsed drain current: 60A Power dissipation: 69W Case: Power56 Gate-source voltage: ±20V On-state resistance: 11.8mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2927 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
FDMS86520L | ON Semiconductor |
Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
FDMS86520L | onsemi |
MOSFETs 60V N-Channel PowerTrench MOSFET |
auf Bestellung 16160 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
FDMS86520L | onsemi / Fairchild |
MOSFETs 60V N-Channel PowerTrench MOSFET |
auf Bestellung 16488 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
FDMS86520L | onsemi |
Description: MOSFET N CH 60V 13.5A 8PQFN Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 4582 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDMS86520L |
|
Hersteller: onsemi
Description: MOSFET N CH 60V 13.5A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N CH 60V 13.5A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.69 EUR |
| FDMS86520L |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R
Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R
auf Bestellung 501 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 2.64 EUR |
| 500+ | 2.34 EUR |
| FDMS86520L |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R
Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R
auf Bestellung 999 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 2.64 EUR |
| 500+ | 2.34 EUR |
| FDMS86520L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Pulsed drain current: 60A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Pulsed drain current: 60A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2927 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 2.86 EUR |
| 37+ | 2.34 EUR |
| 41+ | 2.09 EUR |
| 48+ | 1.78 EUR |
| 100+ | 1.63 EUR |
| FDMS86520L |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R
Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 52+ | 3.39 EUR |
| 72+ | 2.38 EUR |
| 100+ | 1.8 EUR |
| 500+ | 1.56 EUR |
| 1000+ | 1.46 EUR |
| 3000+ | 1.24 EUR |
| FDMS86520L |
|
Hersteller: onsemi
MOSFETs 60V N-Channel PowerTrench MOSFET
MOSFETs 60V N-Channel PowerTrench MOSFET
auf Bestellung 16160 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.86 EUR |
| 10+ | 2.75 EUR |
| 100+ | 2.12 EUR |
| 500+ | 1.86 EUR |
| 1000+ | 1.77 EUR |
| 3000+ | 1.65 EUR |
| FDMS86520L |
|
Hersteller: onsemi / Fairchild
MOSFETs 60V N-Channel PowerTrench MOSFET
MOSFETs 60V N-Channel PowerTrench MOSFET
auf Bestellung 16488 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.11 EUR |
| 10+ | 2.83 EUR |
| 100+ | 1.77 EUR |
| 500+ | 1.75 EUR |
| 1000+ | 1.71 EUR |
| 3000+ | 1.57 EUR |
| FDMS86520L |
|
Hersteller: onsemi
Description: MOSFET N CH 60V 13.5A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N CH 60V 13.5A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 4582 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.49 EUR |
| 10+ | 3.55 EUR |
| 100+ | 2.44 EUR |
| 500+ | 1.98 EUR |
| 1000+ | 1.82 EUR |