auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 4.71 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMS86550 ON Semiconductor
Description: MOSFET N-CH 60V 32A/155A POWER56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 155A (Tc), Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V, Power Dissipation (Max): 2.7W (Ta), 156W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11530 pF @ 30 V.
Weitere Produktangebote FDMS86550 nach Preis ab 3.67 EUR bis 11.46 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDMS86550 | Hersteller : onsemi |
 Description: MOSFET N-CH 60V 32A/155A POWER56Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 155A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V Power Dissipation (Max): 2.7W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11530 pF @ 30 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FDMS86550 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 32A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
FDMS86550 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 32A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
FDMS86550 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 32A 8-Pin PQFN EP T/R |
auf Bestellung 2964 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
FDMS86550 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 32A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
FDMS86550 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 32A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
FDMS86550 | Hersteller : onsemi / Fairchild |
MOSFETs 60V N-Channel PowerTrench MOSFET |
auf Bestellung 2188 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FDMS86550 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 32A/155A POWER56 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 155A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V Power Dissipation (Max): 2.7W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11530 pF @ 30 V |
auf Bestellung 3341 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
FDMS86550 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 32A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
FDMS86550 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 32A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
FDMS86550 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 32A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| FDMS86550 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 148A; Idm: 1021A; 156W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 148A Pulsed drain current: 1021A Power dissipation: 156W Case: Power56 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 154nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| FDMS86550 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 148A; Idm: 1021A; 156W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 148A Pulsed drain current: 1021A Power dissipation: 156W Case: Power56 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 154nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |