FDMT800100DC onsemi / Fairchild
Hersteller: onsemi / Fairchild
MOSFETs N-Channel Dual Cool 88 PowerTrench MOSFET 100 V, 162 A, 2.95 mO
| Anzahl | Preis |
|---|---|
| 1+ | 10.14 EUR |
| 10+ | 7.97 EUR |
| 100+ | 7.11 EUR |
| 1000+ | 6.86 EUR |
| 3000+ | 6.64 EUR |
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Technische Details FDMT800100DC onsemi / Fairchild
Description: MOSFET N-CH 100V 24A/162A 8DUAL, Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-Dual Cool™88, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.2W (Ta), 156W (Tc), Packaging: Tape & Reel (TR), Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN.
Weitere Produktangebote FDMT800100DC nach Preis ab 7.73 EUR bis 10.91 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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FDMT800100DC | onsemi |
Description: MOSFET N-CH 100V 24A/162A 8DUAL Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-Dual Cool™88 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 2346 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMT800100DC | ONN |
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auf Bestellung 2530 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDMT800100DC |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 24A/162A 8DUAL
Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-Dual Cool™88
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 24A/162A 8DUAL
Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-Dual Cool™88
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2346 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.91 EUR |
| 10+ | 8.35 EUR |
| 100+ | 7.73 EUR |
| FDMT800100DC |
|
Hersteller: ONN
auf Bestellung 2530 Stücke:
Lieferzeit 21-28 Tag (e)