FDMT800100DC ON Semiconductor
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 7.89 EUR |
| 22+ | 6.54 EUR |
| 25+ | 6.22 EUR |
| 100+ | 5.5 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMT800100DC ON Semiconductor
Description: MOSFET N-CH 100V 24A/162A 8DUAL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc), Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V, Power Dissipation (Max): 3.2W (Ta), 156W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-Dual Cool™88, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V.
Weitere Produktangebote FDMT800100DC nach Preis ab 5.5 EUR bis 10.91 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
FDMT800100DC | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH Si 100V 24A 8-Pin TDFNW EP T/R |
auf Bestellung 171 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
FDMT800100DC | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 24A 8-Pin TDFNW EP T/R |
auf Bestellung 235 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
FDMT800100DC | Hersteller : onsemi / Fairchild |
MOSFETs N-Channel Dual Cool 88 PowerTrench MOSFET 100 V, 162 A, 2.95 mO |
auf Bestellung 2286 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
FDMT800100DC | Hersteller : onsemi |
Description: MOSFET N-CH 100V 24A/162A 8DUAL Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc) Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V |
auf Bestellung 2346 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
FDMT800100DC | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 24A 8-Pin QFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
FDMT800100DC | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 24A 8-Pin TDFNW EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||
| FDMT800100DC | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 102A Pulsed drain current: 989A Power dissipation: 156W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 5.39mΩ Mounting: SMD Gate charge: 111nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
|
|
FDMT800100DC | Hersteller : onsemi |
Description: MOSFET N-CH 100V 24A/162A 8DUAL Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc) Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V |
Produkt ist nicht verfügbar |
|||||||||||||
| FDMT800100DC | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 102A Pulsed drain current: 989A Power dissipation: 156W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 5.39mΩ Mounting: SMD Gate charge: 111nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |