FDMT800120DC onsemi / Fairchild
auf Bestellung 1058 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.47 EUR |
| 10+ | 7.53 EUR |
| 25+ | 7.37 EUR |
| 100+ | 5.86 EUR |
| 500+ | 5.83 EUR |
| 1000+ | 5.81 EUR |
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Technische Details FDMT800120DC onsemi / Fairchild
Description: MOSFET N-CH 120V 20A 8DLCOOL88, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc), Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V, Power Dissipation (Max): 3.2W (Ta), 156W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-Dual Cool™88, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V.
Weitere Produktangebote FDMT800120DC nach Preis ab 5.42 EUR bis 10.70 EUR
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FDMT800120DC | Hersteller : onsemi |
 Description: MOSFET N-CH 120V 20A 8DLCOOL88Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc) Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V |
auf Bestellung 1077 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMT800120DC | Hersteller : ON Semiconductor |
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auf Bestellung 25990 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMT800120DC | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 120V 20A 8-Pin QFN EP T/R |
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| FDMT800120DC | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 81A; Idm: 767A; 156W; DFNW8 Mounting: SMD Case: DFNW8 Drain-source voltage: 120V Drain current: 81A On-state resistance: 7.7mΩ Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar Kind of package: reel; tape Gate charge: 107nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 767A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMT800120DC | Hersteller : onsemi |
Description: MOSFET N-CH 120V 20A 8DLCOOL88 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc) Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V |
Produkt ist nicht verfügbar |
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| FDMT800120DC | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 81A; Idm: 767A; 156W; DFNW8 Mounting: SMD Case: DFNW8 Drain-source voltage: 120V Drain current: 81A On-state resistance: 7.7mΩ Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar Kind of package: reel; tape Gate charge: 107nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 767A |
Produkt ist nicht verfügbar |