FDMT80040DC onsemi / Fairchild
auf Bestellung 1176 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 18.17 EUR |
| 10+ | 15.73 EUR |
| 25+ | 14.59 EUR |
| 100+ | 13.23 EUR |
| 250+ | 12.61 EUR |
| 500+ | 11.62 EUR |
| 1000+ | 10.61 EUR |
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Technische Details FDMT80040DC onsemi / Fairchild
Description: MOSFET N-CH 40V 420A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 420A (Tc), Rds On (Max) @ Id, Vgs: 0.56mOhm @ 64A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-Dual Cool™88, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 338 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 26110 pF @ 20 V.
Weitere Produktangebote FDMT80040DC nach Preis ab 10.44 EUR bis 18.41 EUR
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FDMT80040DC | Hersteller : onsemi |
 Description: MOSFET N-CH 40V 420A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 420A (Tc) Rds On (Max) @ Id, Vgs: 0.56mOhm @ 64A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 338 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 26110 pF @ 20 V |
auf Bestellung 2907 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDMT80040DC | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 265A; Idm: 2644A; 156W; DFNW8 Mounting: SMD Drain-source voltage: 40V Drain current: 265A On-state resistance: 0.9mΩ Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar Kind of package: reel; tape Gate charge: 338nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 2644A Case: DFNW8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMT80040DC | Hersteller : onsemi |
Description: MOSFET N-CH 40V 420A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 420A (Tc) Rds On (Max) @ Id, Vgs: 0.56mOhm @ 64A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 338 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 26110 pF @ 20 V |
Produkt ist nicht verfügbar |
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| FDMT80040DC | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 265A; Idm: 2644A; 156W; DFNW8 Mounting: SMD Drain-source voltage: 40V Drain current: 265A On-state resistance: 0.9mΩ Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar Kind of package: reel; tape Gate charge: 338nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 2644A Case: DFNW8 |
Produkt ist nicht verfügbar |