FDMT80060DC onsemi
Hersteller: onsemiDescription: MOSFET N-CH 60V 43A/292A 8DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 292A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 43A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20170 pF @ 30 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 8.97 EUR |
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Technische Details FDMT80060DC onsemi
Description: MOSFET N-CH 60V 43A/292A 8DUAL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 292A (Tc), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 43A, 10V, Power Dissipation (Max): 3.2W (Ta), 156W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: 8-Dual Cool™88, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20170 pF @ 30 V.
Weitere Produktangebote FDMT80060DC nach Preis ab 9.26 EUR bis 16.87 EUR
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FDMT80060DC | Hersteller : onsemi |
Description: MOSFET N-CH 60V 43A/292A 8DUAL Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 292A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 43A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-Dual Cool™88 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20170 pF @ 30 V |
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Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 1825A; 156W; DFNW8 Mounting: SMD Drain-source voltage: 60V Drain current: 184A On-state resistance: 1.7mΩ Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar Kind of package: reel; tape Gate charge: 238nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1825A Case: DFNW8 Anzahl je Verpackung: 1 Stücke |
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| FDMT80060DC | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 1825A; 156W; DFNW8 Mounting: SMD Drain-source voltage: 60V Drain current: 184A On-state resistance: 1.7mΩ Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar Kind of package: reel; tape Gate charge: 238nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1825A Case: DFNW8 |
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