FDMT80080DC onsemi
Hersteller: onsemiDescription: MOSFET N-CH 80V 36A/254A 8DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 254A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 36A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20720 pF @ 40 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 4 EUR |
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Technische Details FDMT80080DC onsemi
Description: MOSFET N-CH 80V 36A/254A 8DUAL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 254A (Tc), Rds On (Max) @ Id, Vgs: 1.35mOhm @ 36A, 10V, Power Dissipation (Max): 3.2W (Ta), 156W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-Dual Cool™88, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20720 pF @ 40 V.
Weitere Produktangebote FDMT80080DC nach Preis ab 4.07 EUR bis 8.22 EUR
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FDMT80080DC | Hersteller : onsemi / Fairchild |
MOSFET 80V N ch Dual Cool Power Trench MOSFET |
auf Bestellung 5650 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMT80080DC | Hersteller : onsemi |
Description: MOSFET N-CH 80V 36A/254A 8DUAL Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 254A (Tc) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 36A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20720 pF @ 40 V |
auf Bestellung 9604 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMT80080DC | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 1453A; 156W; DFNW8 Kind of package: reel; tape Power dissipation: 156W Polarisation: unipolar Gate charge: 273nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1453A Mounting: SMD Case: DFNW8 Drain-source voltage: 80V Drain current: 160A On-state resistance: 2.22mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDMT80080DC | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 1453A; 156W; DFNW8 Kind of package: reel; tape Power dissipation: 156W Polarisation: unipolar Gate charge: 273nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1453A Mounting: SMD Case: DFNW8 Drain-source voltage: 80V Drain current: 160A On-state resistance: 2.22mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |