FDN357N ONSEMI
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; 0.5W; SuperSOT-3
Mounting: SMD
Gate charge: 5.9nC
Kind of package: reel; tape
On-state resistance: 0.14Ω
Power dissipation: 0.5W
Technology: PowerTrench®
Drain current: 1.9A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Case: SuperSOT-3
Features of semiconductor devices: logic level
Kind of channel: enhancement
Polarisation: unipolar
| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| 140+ | 0.51 EUR |
| 160+ | 0.45 EUR |
| 211+ | 0.34 EUR |
| 234+ | 0.31 EUR |
| 500+ | 0.24 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDN357N ONSEMI
Description: MOSFET N-CH 30V 1.9A SUPERSOT3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 2.2A, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 10 V.
Weitere Produktangebote FDN357N nach Preis ab 0.35 EUR bis 1.27 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDN357N | Hersteller : onsemi |
MOSFETs SSOT-3 N-CH 30V |
auf Bestellung 4252 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
FDN357N | Hersteller : onsemi |
Description: MOSFET N-CH 30V 1.9A SUPERSOT3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 2.2A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 10 V |
auf Bestellung 2851 Stücke: Lieferzeit 10-14 Tag (e) |
|