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FDN86265P

FDN86265P onsemi


fdn86265p-d.pdf
Hersteller: onsemi
Description: MOSFET P-CH 150V 800MA SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 800mA, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 75 V
auf Bestellung 24000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.66 EUR
6000+0.61 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDN86265P onsemi

Description: MOSFET P-CH 150V 800MA SUPERSOT3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 800mA, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 75 V.

Weitere Produktangebote FDN86265P nach Preis ab 0.6 EUR bis 2.64 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FDN86265P FDN86265P Hersteller : onsemi / Fairchild FDN86265P-D.PDF MOSFETs PT5 150/25V Pch PowerTrench MOSFET
auf Bestellung 9996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.21 EUR
10+1.13 EUR
100+0.89 EUR
500+0.76 EUR
1000+0.71 EUR
3000+0.62 EUR
6000+0.6 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FDN86265P FDN86265P Hersteller : onsemi fdn86265p-d.pdf Description: MOSFET P-CH 150V 800MA SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 800mA, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 75 V
auf Bestellung 24738 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.64 EUR
11+1.67 EUR
100+1.12 EUR
500+0.88 EUR
1000+0.8 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH