Technische Details FDP032N08B-F102 ON Semiconductor
Description: MOSFET N-CH 80V 120A TO220-3, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 263W (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 10965 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V.
Weitere Produktangebote FDP032N08B-F102 nach Preis ab 2.38 EUR bis 7.1 EUR
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FDP032N08B-F102 | onsemi |
 MOSFETs N-Channel PowerTrench MOSFET 80V, 211A, 3.3mO |
auf Bestellung 811 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP032N08B-F102 | onsemi |
Description: MOSFET N-CH 80V 120A TO220-3 Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 263W (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 10965 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
auf Bestellung 4868 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDP032N08B-F102 |
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Hersteller: onsemi
MOSFETs N-Channel PowerTrench MOSFET 80V, 211A, 3.3mO
MOSFETs N-Channel PowerTrench MOSFET 80V, 211A, 3.3mO
auf Bestellung 811 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.06 EUR |
| 10+ | 3.61 EUR |
| FDP032N08B-F102 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 120A TO220-3
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10965 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CH 80V 120A TO220-3
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10965 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 4868 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.1 EUR |
| 50+ | 3.61 EUR |
| 100+ | 3.27 EUR |
| 500+ | 2.68 EUR |
| 1000+ | 2.49 EUR |
| 2000+ | 2.38 EUR |