FDP032N08B-F102 onsemi / Fairchild
auf Bestellung 1348 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.49 EUR |
| 10+ | 2.82 EUR |
| 100+ | 2.68 EUR |
| 500+ | 2.32 EUR |
| 1000+ | 2.31 EUR |
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Technische Details FDP032N08B-F102 onsemi / Fairchild
Description: MOSFET N-CH 80V 120A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V, Power Dissipation (Max): 263W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10965 pF @ 40 V.
Weitere Produktangebote FDP032N08B-F102 nach Preis ab 2.08 EUR bis 5.76 EUR
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FDP032N08B-F102 | Hersteller : onsemi |
 Description: MOSFET N-CH 80V 120A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10965 pF @ 40 V |
auf Bestellung 4343 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP032N08B-F102 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 211A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FDP032N08B-F102 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 211A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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FDP032N08B-F102 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 211A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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FDP032N08B-F102 | Hersteller : ONSEMI |
Description: ONSEMI - FDP032N08B-F102 - MOSFET'S - SINGLE SVHC: Lead (10-Jun-2022) |
Produkt ist nicht verfügbar |
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| FDP032N08B-F102 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 211A; Idm: 844A; 263W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 211A Pulsed drain current: 844A Power dissipation: 263W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: THT Gate charge: 111nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDP032N08B-F102 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 211A; Idm: 844A; 263W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 211A Pulsed drain current: 844A Power dissipation: 263W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: THT Gate charge: 111nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |