FDP047N10 ON Semiconductor
| Anzahl | Preis |
|---|---|
| 141+ | 3.85 EUR |
| 500+ | 3.52 EUR |
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Technische Details FDP047N10 ON Semiconductor
Description: MOSFET N-CH 100V 120A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V.
Weitere Produktangebote FDP047N10 nach Preis ab 3.71 EUR bis 9.15 EUR
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FDP047N10 | Hersteller : onsemi / Fairchild |
 MOSFETs 100V N-Channel PowerTrench |
auf Bestellung 4533 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP047N10 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V |
auf Bestellung 87 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP047N10 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 164A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP047N10 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 164A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDP047N10 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 375W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 164A Pulsed drain current: 656A Power dissipation: 375W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhancement |
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