| Anzahl | Preis |
|---|---|
| 1+ | 4.05 EUR |
| 10+ | 1.97 EUR |
| 100+ | 1.8 EUR |
| 500+ | 1.56 EUR |
| 1000+ | 1.53 EUR |
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Technische Details FDP053N08B-F102 onsemi / Fairchild
Description: MOSFET N-CH 80V 75A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 5960 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 146W (Tc), Rds On (Max) @ Id, Vgs: 5.3mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote FDP053N08B-F102 nach Preis ab 1.47 EUR bis 4.4 EUR
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FDP053N08B-F102 | onsemi |
 Description: MOSFET N-CH 80V 75A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 5960 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 146W (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 1465 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDP053N08B-F102 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 75A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 5960 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 146W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 80V 75A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 5960 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 146W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1465 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.4 EUR |
| 50+ | 2.19 EUR |
| 100+ | 1.97 EUR |
| 500+ | 1.59 EUR |
| 1000+ | 1.47 EUR |