FDP053N08B-F102 ON Semiconductor
auf Bestellung 1158 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis | 
|---|---|
| 253+ | 2.15 EUR | 
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Technische Details FDP053N08B-F102 ON Semiconductor
Description: MOSFET N-CH 80V 75A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 5.3mOhm @ 75A, 10V, Power Dissipation (Max): 146W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5960 pF @ 40 V. 
Weitere Produktangebote FDP053N08B-F102 nach Preis ab 1.46 EUR bis 3.75 EUR
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        FDP053N08B-F102 | Hersteller : ON Semiconductor | 
            
                         Trans MOSFET N-CH Si 80V 120A 3-Pin(3+Tab) TO-220 Tube         | 
        
                             auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) | 
        
            
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        FDP053N08B-F102 | Hersteller : ON Semiconductor | 
            
                         Trans MOSFET N-CH Si 80V 120A 3-Pin(3+Tab) TO-220 Tube         | 
        
                             auf Bestellung 49396 Stücke: Lieferzeit 14-21 Tag (e) | 
        
            
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        FDP053N08B-F102 | Hersteller : onsemi / Fairchild | 
            
                         MOSFETs Smart Power Module         | 
        
                             auf Bestellung 581 Stücke: Lieferzeit 10-14 Tag (e) | 
        
            
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        FDP053N08B-F102 | Hersteller : onsemi | 
            
                         Description: MOSFET N-CH 80V 75A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 75A, 10V Power Dissipation (Max): 146W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5960 pF @ 40 V  | 
        
                             auf Bestellung 1490 Stücke: Lieferzeit 10-14 Tag (e) | 
        
            
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        FDP053N08B-F102 | Hersteller : ON Semiconductor | 
            
                         Trans MOSFET N-CH Si 80V 120A 3-Pin(3+Tab) TO-220 Tube         | 
        
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        FDP053N08B-F102 | Hersteller : ON Semiconductor | 
            
                         Trans MOSFET N-CH Si 80V 120A 3-Pin(3+Tab) TO-220 Tube         | 
        
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| FDP053N08B-F102 | Hersteller : ONSEMI | 
            
                         Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 480A; 146W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Power dissipation: 146W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: THT Gate charge: 65.4nC Kind of channel: enhancement Pulsed drain current: 480A Kind of package: tube  | 
        
                             Produkt ist nicht verfügbar                      | 
        


