Technische Details FDP053N08B-F102 ON Semiconductor
Description: MOSFET N-CH 80V 75A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 5960 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 146W (Tc), Rds On (Max) @ Id, Vgs: 5.3mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote FDP053N08B-F102 nach Preis ab 1.8 EUR bis 5.32 EUR
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FDP053N08B-F102 | ON Semiconductor |
 Trans MOSFET N-CH Si 80V 120A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1158 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP053N08B-F102 | ON Semiconductor |
Trans MOSFET N-CH Si 80V 120A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 49396 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP053N08B-F102 | onsemi / Fairchild |
MOSFETs Smart Power Module |
auf Bestellung 629 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP053N08B-F102 | onsemi |
MOSFETs Smart Power Module |
auf Bestellung 229 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP053N08B-F102 | onsemi |
Description: MOSFET N-CH 80V 75A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 5960 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 146W (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDP053N08B-F102 |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 80V 120A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH Si 80V 120A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 1158 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 253+ | 2.58 EUR |
| FDP053N08B-F102 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 80V 120A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH Si 80V 120A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 49396 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 253+ | 2.58 EUR |
| FDP053N08B-F102 |
|
Hersteller: onsemi / Fairchild
MOSFETs Smart Power Module
MOSFETs Smart Power Module
auf Bestellung 629 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.82 EUR |
| 10+ | 2.34 EUR |
| 100+ | 2.14 EUR |
| 500+ | 1.86 EUR |
| 1000+ | 1.82 EUR |
| FDP053N08B-F102 |
|
Hersteller: onsemi
MOSFETs Smart Power Module
MOSFETs Smart Power Module
auf Bestellung 229 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.21 EUR |
| 10+ | 2.59 EUR |
| 100+ | 2.32 EUR |
| 500+ | 1.87 EUR |
| 1000+ | 1.8 EUR |
| FDP053N08B-F102 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 75A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 5960 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 146W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 80V 75A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 5960 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 146W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.32 EUR |
| 50+ | 2.64 EUR |
| 100+ | 2.38 EUR |
| 500+ | 1.92 EUR |