FDP085N10A-F102 onsemi / Fairchild
| Anzahl | Preis |
|---|---|
| 1+ | 5.14 EUR |
| 10+ | 2.57 EUR |
| 100+ | 2.36 EUR |
| 500+ | 2.02 EUR |
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Technische Details FDP085N10A-F102 onsemi / Fairchild
Description: MOSFET N-CH 100V 96A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 96A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 96A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2695 pF @ 50 V.
Weitere Produktangebote FDP085N10A-F102 nach Preis ab 2.01 EUR bis 6 EUR
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FDP085N10A-F102 | onsemi |
 Description: MOSFET N-CH 100V 96A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 96A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2695 pF @ 50 V |
auf Bestellung 498 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP085N10A-F102 | onsemi |
MOSFETs 100V N-CHANNEL POWERTRENCH MOSFET |
auf Bestellung 3173 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDP085N10A-F102 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 96A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 96A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2695 pF @ 50 V
Description: MOSFET N-CH 100V 96A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 96A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2695 pF @ 50 V
auf Bestellung 498 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.33 EUR |
| 50+ | 2.69 EUR |
| 100+ | 2.43 EUR |
| FDP085N10A-F102 |
|
Hersteller: onsemi
MOSFETs 100V N-CHANNEL POWERTRENCH MOSFET
MOSFETs 100V N-CHANNEL POWERTRENCH MOSFET
auf Bestellung 3173 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6 EUR |
| 10+ | 3.29 EUR |
| 100+ | 2.53 EUR |
| 500+ | 2.11 EUR |
| 2500+ | 2.01 EUR |