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FDP100N10

FDP100N10 Fairchild Semiconductor

ONSM-S-A0003585389-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 7
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
auf Bestellung 2970 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
159+4.54 EUR
Mindestbestellmenge: 159
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Technische Details FDP100N10 Fairchild Semiconductor

Description: MOSFET N-CH 100V 75A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V.

Weitere Produktangebote FDP100N10 nach Preis ab 4.13 EUR bis 8.48 EUR

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FDP100N10 FDP100N10 Hersteller : onsemi fdp100n10-d.pdf Description: MOSFET N-CH 100V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
auf Bestellung 675 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.42 EUR
50+ 6.68 EUR
100+ 5.72 EUR
500+ 5.09 EUR
Mindestbestellmenge: 4
FDP100N10 FDP100N10 Hersteller : onsemi / Fairchild FDP100N10_D-2312530.pdf MOSFET 100V N-Channel PowerTrench
auf Bestellung 795 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
7+8.48 EUR
10+ 7.75 EUR
50+ 6.73 EUR
100+ 5.75 EUR
500+ 5.1 EUR
800+ 4.13 EUR
Mindestbestellmenge: 7
FDP100N10 FDP100N10 Hersteller : ON Semiconductor 4264353930672060fdp100n10-d.pdf Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-220 Tube
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