auf Bestellung 7146 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 4.89 EUR |
| 500+ | 2.96 EUR |
| 800+ | 2.45 EUR |
Produktrezensionen
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Technische Details FDP12N50NZ onsemi / Fairchild
Description: MOSFET N-CH 500V 11.5A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc), Rds On (Max) @ Id, Vgs: 520mOhm @ 5.75A, 10V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 25 V.
Weitere Produktangebote FDP12N50NZ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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|---|---|---|---|---|---|
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FDP12N50NZ | Hersteller : ONSEMI |
 Description: ONSEMI - FDP12N50NZ - Leistungs-MOSFET, n-Kanal, 500 V, 11.5 A, 0.46 ohm, TO-220Drain-Source-Spannung Vds: 500 Dauer-Drainstrom Id: 11.5 Qualifikation: - Verlustleistung Pd: 170 Gate-Source-Schwellenspannung, max.: 5 Verlustleistung: 170 Bauform - Transistor: TO-220 Anzahl der Pins: 3 Produktpalette: UniFET II Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.46 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.46 SVHC: Lead (17-Jan-2022) |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP12N50NZ | Hersteller : onsemi |
Description: MOSFET N-CH 500V 11.5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 5.75A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 25 V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP12N50NZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 500V 11.5A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FDP12N50NZ | Hersteller : onsemi |
Description: MOSFET N-CH 500V 11.5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 5.75A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDP12N50NZ | Hersteller : Fairchild Semiconductor |
Description: MOSFET N-CH 500V 11.5A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 5.75A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 25 V |
Produkt ist nicht verfügbar |