FDP150N10 ON Semiconductor
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 3.85 EUR |
| 100+ | 3.68 EUR |
| 250+ | 3.51 EUR |
| 500+ | 3.34 EUR |
| 1000+ | 3.18 EUR |
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Technische Details FDP150N10 ON Semiconductor
Description: MOSFET N-CH 100V 57A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 57A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 49A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V.
Weitere Produktangebote FDP150N10 nach Preis ab 3.86 EUR bis 4.68 EUR
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FDP150N10 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP150N10 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-220 Tube |
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FDP150N10 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 57A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 49A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V |
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FDP150N10 | Hersteller : onsemi |
MOSFETs 100V N-Channel PowerTrench |
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| FDP150N10 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 57A Pulsed drain current: 228A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |