FDP19N40 ON Semiconductor
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 228+ | 2.41 EUR |
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Technische Details FDP19N40 ON Semiconductor
Description: MOSFET N-CH 400V 19A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 9.5A, 10V, Power Dissipation (Max): 215W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2115 pF @ 25 V.
Weitere Produktangebote FDP19N40 nach Preis ab 2.63 EUR bis 2.63 EUR
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FDP19N40 | Hersteller : onsemi |
 Description: MOSFET N-CH 400V 19A TO220-3Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 9.5A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2115 pF @ 25 V |
auf Bestellung 350 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP19N40 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 400V 19A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FDP19N40 | Hersteller : ONSEMI |
Description: ONSEMI - FDP19N40 - MOSFET'S - SINGLE SVHC: Lead (17-Jan-2022) |
Produkt ist nicht verfügbar |
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FDP19N40 | Hersteller : onsemi |
Description: MOSFET N-CH 400V 19A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 9.5A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2115 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDP19N40 | Hersteller : onsemi / Fairchild |
MOSFETs UniFET, 400V |
Produkt ist nicht verfügbar |