Weitere Produktangebote FDP20N50F nach Preis ab 2.42 EUR bis 6.44 EUR
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FDP20N50F | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 250W; TO220-3 Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12.9A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 80A Gate charge: 65nC |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP20N50F | onsemi |
MOSFETs 500V N-Channel |
auf Bestellung 5248 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDP20N50F |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 65nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 65nC
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.22 EUR |
| 19+ | 3.9 EUR |
| 20+ | 3.66 EUR |
| 21+ | 3.47 EUR |
| 25+ | 2.86 EUR |
| 30+ | 2.42 EUR |
| FDP20N50F |
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Hersteller: onsemi
MOSFETs 500V N-Channel
MOSFETs 500V N-Channel
auf Bestellung 5248 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 6.44 EUR |
| 10+ | 3.29 EUR |
| 100+ | 2.97 EUR |


