| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.78 EUR |
| 10+ | 4.61 EUR |
| 50+ | 4 EUR |
| 100+ | 3.92 EUR |
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Technische Details FDP2710 onsemi / Fairchild
Description: MOSFET N-CH 250V 50A TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 260W (Tc), Rds On (Max) @ Id, Vgs: 42.5mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 7280 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±30V.
Weitere Produktangebote FDP2710 nach Preis ab 4.9 EUR bis 8.13 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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FDP2710 | onsemi |
 Description: MOSFET N-CH 250V 50A TO220-3Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 260W (Tc) Rds On (Max) @ Id, Vgs: 42.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 7280 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V |
auf Bestellung 955 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDP2710 |
|
Hersteller: onsemi
Description: MOSFET N-CH 250V 50A TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 260W (Tc)
Rds On (Max) @ Id, Vgs: 42.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Description: MOSFET N-CH 250V 50A TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 260W (Tc)
Rds On (Max) @ Id, Vgs: 42.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
auf Bestellung 955 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.13 EUR |
| 50+ | 6.43 EUR |
| 100+ | 5.51 EUR |
| 500+ | 4.9 EUR |