FDP2D3N10C onsemi / Fairchild
| Anzahl | Preis |
|---|---|
| 1+ | 10.61 EUR |
| 10+ | 10.49 EUR |
| 25+ | 6.14 EUR |
| 100+ | 5.65 EUR |
| 500+ | 5.61 EUR |
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Technische Details FDP2D3N10C onsemi / Fairchild
Description: MOSFET N-CH 100V 222A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 11180 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 700µA, Power Dissipation (Max): 214W (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 222A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote FDP2D3N10C nach Preis ab 5.45 EUR bis 12.53 EUR
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FDP2D3N10C | Hersteller : onsemi |
 Description: MOSFET N-CH 100V 222A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 11180 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 700µA Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 222A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 153574 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDP2D3N10C | Hersteller : ONN |
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auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) |