FDP3652 ON Semiconductor
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 76+ | 1.9 EUR |
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Technische Details FDP3652 ON Semiconductor
Description: MOSFET N-CH 100V 9A/61A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 61A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 61A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V.
Weitere Produktangebote FDP3652 nach Preis ab 1.16 EUR bis 4.31 EUR
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FDP3652 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP3652 | Hersteller : onsemi / Fairchild |
MOSFETs 100V 61a 0.016 Ohm |
auf Bestellung 59 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP3652 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 9A/61A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 61A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V |
auf Bestellung 3800 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP3652 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP3652 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FDP3652 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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| FDP3652 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 150W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 43A Power dissipation: 150W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDP3652 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 150W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 43A Power dissipation: 150W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |