FDP3652 ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 76+ | 2.34 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
76 Stücke
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Technische Details FDP3652 ON Semiconductor
Description: MOSFET N-CH 100V 9A/61A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 61A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 61A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V.
Weitere Produktangebote FDP3652 nach Preis ab 1.43 EUR bis 5.13 EUR
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FDP3652 | ON Semiconductor |
 Trans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP3652 | onsemi / Fairchild |
MOSFETs 100V 61a 0.016 Ohm |
auf Bestellung 59 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP3652 | onsemi |
Description: MOSFET N-CH 100V 9A/61A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 61A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V |
auf Bestellung 3800 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDP3652 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 4.47 EUR |
| 69+ | 2.51 EUR |
| 100+ | 1.76 EUR |
| 800+ | 1.55 EUR |
| 1600+ | 1.43 EUR |
| FDP3652 |
|
Hersteller: onsemi / Fairchild
MOSFETs 100V 61a 0.016 Ohm
MOSFETs 100V 61a 0.016 Ohm
auf Bestellung 59 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.63 EUR |
| 10+ | 2.7 EUR |
| 100+ | 1.96 EUR |
| 500+ | 1.58 EUR |
| FDP3652 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 9A/61A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 61A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Description: MOSFET N-CH 100V 9A/61A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 61A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
auf Bestellung 3800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.13 EUR |
| 10+ | 2.8 EUR |
| 100+ | 2.07 EUR |
| 800+ | 1.71 EUR |
| 1600+ | 1.59 EUR |
| 2400+ | 1.54 EUR |