FDP3682 ONSEMI
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 95W; TO220-3
Kind of package: tube
Drain-source voltage: 100V
Drain current: 23A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 95W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220-3
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 95W; TO220-3
Kind of package: tube
Drain-source voltage: 100V
Drain current: 23A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 95W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 76 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
33+ | 2.19 EUR |
36+ | 2 EUR |
41+ | 1.77 EUR |
48+ | 1.52 EUR |
50+ | 1.43 EUR |
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Produktbewertung abgeben
Technische Details FDP3682 ONSEMI
Description: MOSFET N-CH 100V 6A/32A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 32A (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V, Power Dissipation (Max): 95W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V.
Weitere Produktangebote FDP3682 nach Preis ab 1.43 EUR bis 4.99 EUR
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FDP3682 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 95W; TO220-3 Kind of package: tube Drain-source voltage: 100V Drain current: 23A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 95W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO220-3 |
auf Bestellung 76 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP3682 | Hersteller : onsemi / Fairchild | MOSFET 100V 32a .36Ohm/VGS=1V |
auf Bestellung 20887 Stücke: Lieferzeit 14-28 Tag (e) |
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FDP3682 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 6A/32A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V |
auf Bestellung 7161 Stücke: Lieferzeit 21-28 Tag (e) |
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FDP3682 Produktcode: 107819 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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FDP3682 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 100V 6A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |