FDP42AN15A0 ONSEMI
Hersteller: ONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB
Mounting: THT
Gate charge: 39nC
On-state resistance: 0.107Ω
Gate-source voltage: ±20V
Drain current: 24A
Power dissipation: 150W
Drain-source voltage: 150V
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Case: TO220AB
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 3.3 EUR |
| 28+ | 2.6 EUR |
| 32+ | 2.27 EUR |
| 50+ | 1.84 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDP42AN15A0 ONSEMI
Description: MOSFET N-CH 150V 5A/35A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 12A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V.
Weitere Produktangebote FDP42AN15A0 nach Preis ab 1.78 EUR bis 4.95 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
FDP42AN15A0 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB Mounting: THT Gate charge: 39nC On-state resistance: 0.107Ω Gate-source voltage: ±20V Drain current: 24A Power dissipation: 150W Drain-source voltage: 150V Polarisation: unipolar Kind of package: tube Kind of channel: enhancement Type of transistor: N-MOSFET Technology: PowerTrench® Case: TO220AB |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
FDP42AN15A0 | Hersteller : onsemi |
MOSFETs 150V 35a .42 Ohms/VGS=1V |
auf Bestellung 2445 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| FDP42AN15A0 | Hersteller : ON-Semiconductor |
Transistor N-Channel MOSFET; 150V; 20V; 107mOhm; 30A; 150W; -55°C ~ 175°C; FDP42AN15A0 TFDP42an15a0 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
 |
FDP42AN15A0 Produktcode: 111207
zu Favoriten hinzufügen
Lieblingsprodukt
|
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
|
||||||||||||||
 |
FDP42AN15A0 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 5A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
|||||||||||||
 |
FDP42AN15A0 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 5A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
|||||||||||||
 |
FDP42AN15A0 | Hersteller : onsemi |
Description: MOSFET N-CH 150V 5A/35A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 12A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V |
Produkt ist nicht verfügbar |