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FDP8441

FDP8441 onsemi

fdp8441-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 40V 23A/80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 2187 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.58 EUR
10+3.84 EUR
100+3.11 EUR
500+2.76 EUR
1000+2.36 EUR
2000+2.23 EUR
Mindestbestellmenge: 4
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Technische Details FDP8441 onsemi

Description: MOSFET N-CH 40V 23A/80A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.

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FDP8441 FDP8441 Hersteller : ON Semiconductor / Fairchild FDP8441-1305855.pdf MOSFET 40V N-Channel PowerTrench MOSFET
auf Bestellung 406 Stücke:
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