| Anzahl | Preis |
|---|---|
| 5+ | 3.56 EUR |
| 10+ | 2.28 EUR |
| 100+ | 1.56 EUR |
| 500+ | 1.24 EUR |
| 1000+ | 1.14 EUR |
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Technische Details FDP8D5N10C UMW
Description: MOSFET N-CH 100V 76A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 76A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 76A, 10V, Power Dissipation (Max): 2.4W (Ta), 107W (Tc), Vgs(th) (Max) @ Id: 4V @ 130µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 50 V.
Weitere Produktangebote FDP8D5N10C nach Preis ab 2.02 EUR bis 4.07 EUR
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FDP8D5N10C | onsemi |
 MOSFETs FET 100V 76A 8.5 mOhm |
auf Bestellung 1530 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP8D5N10C | onsemi |
Description: MOSFET N-CH 100V 76A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 76A, 10V Power Dissipation (Max): 2.4W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 130µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 50 V |
auf Bestellung 745 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDP8D5N10C | ON Semiconductor |
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auf Bestellung 750 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDP8D5N10C |
|
Hersteller: onsemi
MOSFETs FET 100V 76A 8.5 mOhm
MOSFETs FET 100V 76A 8.5 mOhm
auf Bestellung 1530 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 3.96 EUR |
| 10+ | 2.71 EUR |
| 100+ | 2.59 EUR |
| 500+ | 2.13 EUR |
| 800+ | 2.11 EUR |
| 2400+ | 2.02 EUR |
| FDP8D5N10C |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 76A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 76A, 10V
Power Dissipation (Max): 2.4W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 50 V
Description: MOSFET N-CH 100V 76A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 76A, 10V
Power Dissipation (Max): 2.4W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 50 V
auf Bestellung 745 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.07 EUR |
| 50+ | 2.69 EUR |
| 100+ | 2.58 EUR |
| 500+ | 2.11 EUR |
| FDP8D5N10C |
|
Hersteller: ON Semiconductor
auf Bestellung 750 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH