Weitere Produktangebote FDPC5030SG nach Preis ab 0.8 EUR bis 3.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDPC5030SG | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 17A PWRCLIP56Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W, 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A, 25A Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power Clip 56 Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
FDPC5030SG | Hersteller : onsemi |
MOSFETs PT8+ N & PT8 N |
auf Bestellung 3848 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
FDPC5030SG | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 17A PWRCLIP56Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W, 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A, 25A Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power Clip 56 Part Status: Active |
auf Bestellung 7980 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| FDPC5030SG | Hersteller : ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 56/84A; 23/25W; PQFN8 Mounting: SMD Case: PQFN8 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Kind of package: reel; tape Gate charge: 17/39nC On-state resistance: 5/2.4mΩ Power dissipation: 23/25W Gate-source voltage: ±20/±12V Drain-source voltage: 30V Drain current: 56/84A Semiconductor structure: asymmetric Polarisation: unipolar |
auf Bestellung 2993 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
|
FDPC5030SG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 56A/84A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||
|
FDPC5030SG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 56A/84A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |


