FDPC8011S onsemi / Fairchild
auf Bestellung 3175 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.82 EUR |
| 10+ | 2.76 EUR |
| 100+ | 2.32 EUR |
| 500+ | 2.2 EUR |
| 1000+ | 2.15 EUR |
| 3000+ | 1.01 EUR |
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Produktbewertung abgeben
Technische Details FDPC8011S onsemi / Fairchild
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 800mW (Ta), 900mW (Ta), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 20A (Tc), 27A (Ta), 60A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 13V, 4335pF @ 13V, Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 1.8mOhm @ 27A, 10V, Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 64nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA, Supplier Device Package: Powerclip-33, Part Status: Active.
Weitere Produktangebote FDPC8011S nach Preis ab 3.05 EUR bis 7.02 EUR
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FDPC8011S | Hersteller : onsemi |
 Description: MOSFET 2N-CH 25V 13A PWRCLIP-33Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW (Ta), 900mW (Ta) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 20A (Tc), 27A (Ta), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 13V, 4335pF @ 13V Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 1.8mOhm @ 27A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 64nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA Supplier Device Package: Powerclip-33 Part Status: Active |
auf Bestellung 1964 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPC8011S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 25V 13A/27A 8-Pin Power Clip 33 T/R |
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| FDPC8011S | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 20/60A; 1.6/2W; PQFN8 Case: PQFN8 Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Gate charge: 19/64nC On-state resistance: 6/1.8mΩ Power dissipation: 1.6/2W Drain current: 20/60A Drain-source voltage: 25V Semiconductor structure: asymmetric Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDPC8011S | Hersteller : onsemi |
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW (Ta), 900mW (Ta) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 20A (Tc), 27A (Ta), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 13V, 4335pF @ 13V Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 1.8mOhm @ 27A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 64nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA Supplier Device Package: Powerclip-33 Part Status: Active |
Produkt ist nicht verfügbar |
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| FDPC8011S | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 20/60A; 1.6/2W; PQFN8 Case: PQFN8 Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Gate charge: 19/64nC On-state resistance: 6/1.8mΩ Power dissipation: 1.6/2W Drain current: 20/60A Drain-source voltage: 25V Semiconductor structure: asymmetric Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |