
FDPC8013S onsemi / Fairchild
auf Bestellung 845 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 3.8 EUR |
10+ | 2.45 EUR |
100+ | 1.68 EUR |
500+ | 1.34 EUR |
1000+ | 1.33 EUR |
3000+ | 1.13 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDPC8013S onsemi / Fairchild
Description: MOSFET 2N-CH 30V 13A PWRCLIP-33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 800mW, 900mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 13A, 26A, Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 15V, Rds On (Max) @ Id, Vgs: 6.4mOhm @ 13A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: Powerclip-33, Part Status: Active.
Weitere Produktangebote FDPC8013S nach Preis ab 1.91 EUR bis 4.79 EUR
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FDPC8013S | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW, 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 26A Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 15V Rds On (Max) @ Id, Vgs: 6.4mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Powerclip-33 Part Status: Active |
auf Bestellung 260 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPC8013S | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FDPC8013S | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FDPC8013S | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 20/55A; 1.6/2W; PQFN8 Case: PQFN8 Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Gate charge: 13/44nC On-state resistance: 6.4/1.9mΩ Power dissipation: 1.6/2W Gate-source voltage: ±20V Drain current: 20/55A Drain-source voltage: 30V Semiconductor structure: asymmetric Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDPC8013S | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW, 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 26A Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 15V Rds On (Max) @ Id, Vgs: 6.4mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Powerclip-33 Part Status: Active |
Produkt ist nicht verfügbar |
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FDPC8013S | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 20/55A; 1.6/2W; PQFN8 Case: PQFN8 Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Gate charge: 13/44nC On-state resistance: 6.4/1.9mΩ Power dissipation: 1.6/2W Gate-source voltage: ±20V Drain current: 20/55A Drain-source voltage: 30V Semiconductor structure: asymmetric Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |