FDPC8016S onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 25V 20A PWRCLIP56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W, 2.3W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20A, 35A
Input Capacitance (Ciss) (Max) @ Vds: 2375pF @ 13V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Power Clip 56
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.25 EUR |
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Technische Details FDPC8016S onsemi
Description: MOSFET 2N-CH 25V 20A PWRCLIP56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.1W, 2.3W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 20A, 35A, Input Capacitance (Ciss) (Max) @ Vds: 2375pF @ 13V, Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: Power Clip 56, Part Status: Active.
Weitere Produktangebote FDPC8016S nach Preis ab 1.13 EUR bis 3.64 EUR
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FDPC8016S | Hersteller : onsemi |
Description: MOSFET 2N-CH 25V 20A PWRCLIP56 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W, 2.3W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A, 35A Input Capacitance (Ciss) (Max) @ Vds: 2375pF @ 13V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: Power Clip 56 Part Status: Active |
auf Bestellung 4657 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPC8016S | Hersteller : onsemi / Fairchild |
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FDPC8016S | Hersteller : ONSEMI |
Description: ONSEMI - FDPC8016S - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 27471 Stücke: Lieferzeit 14-21 Tag (e) |
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auf Bestellung 2975 Stücke: Lieferzeit 21-28 Tag (e) |
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FDPC8016S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 25V 20A/35A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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| FDPC8016S | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 60/100A; 21/42W; PQFN8 Case: PQFN8 Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Gate charge: 25/67nC On-state resistance: 3.8/1.4mΩ Power dissipation: 21/42W Gate-source voltage: ±12V Drain current: 60/100A Drain-source voltage: 25V Semiconductor structure: asymmetric Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDPC8016S | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 60/100A; 21/42W; PQFN8 Case: PQFN8 Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Gate charge: 25/67nC On-state resistance: 3.8/1.4mΩ Power dissipation: 21/42W Gate-source voltage: ±12V Drain current: 60/100A Drain-source voltage: 25V Semiconductor structure: asymmetric Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |