auf Bestellung 10840 Stücke:
Lieferzeit 217-231 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 8.97 EUR |
10+ | 7.72 EUR |
25+ | 7.15 EUR |
100+ | 6.16 EUR |
250+ | 5.9 EUR |
500+ | 5.3 EUR |
1000+ | 4.91 EUR |
Produktrezensionen
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Technische Details FDPF20N50T onsemi / Fairchild
Description: MOSFET N-CH 500V 20A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V, Power Dissipation (Max): 38.5W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V.
Weitere Produktangebote FDPF20N50T nach Preis ab 2.45 EUR bis 11.91 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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FDPF20N50T | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 38.5W Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12.9A Pulsed drain current: 80A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 59.5nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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FDPF20N50T | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 38.5W Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12.9A Pulsed drain current: 80A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 59.5nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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FDPF20N50T | Hersteller : ON Semiconductor |
auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDPF20N50T | Hersteller : ON Semiconductor | Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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FDPF20N50T | Hersteller : ON Semiconductor | Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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FDPF20N50T | Hersteller : ON Semiconductor | Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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FDPF20N50T | Hersteller : ON Semiconductor | Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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FDPF20N50T | Hersteller : ON Semiconductor | Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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FDPF20N50T | Hersteller : onsemi |
Description: MOSFET N-CH 500V 20A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V Power Dissipation (Max): 38.5W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V |
Produkt ist nicht verfügbar |