| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.12 EUR |
| 10+ | 2.59 EUR |
| 100+ | 2.07 EUR |
| 250+ | 1.96 EUR |
| 500+ | 1.73 EUR |
| 1000+ | 1.49 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDS3572 onsemi / Fairchild
Description: MOSFET N-CH 80V 8.9A 8SOIC, Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 8.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote FDS3572 nach Preis ab 1.48 EUR bis 4.61 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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FDS3572 | onsemi |
 Description: MOSFET N-CH 80V 8.9A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 8.9A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V |
auf Bestellung 1271 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS3572 | onsemi |
MOSFETs 80V N-Channel PowerTrench |
auf Bestellung 2017 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS3572 | ON Semiconductor / Fairchild |
MOSFET 80V N-Channel PowerTrench |
auf Bestellung 3795 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDS3572 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V
Description: MOSFET N-CH 80V 8.9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V
auf Bestellung 1271 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.58 EUR |
| 10+ | 2.95 EUR |
| 100+ | 2.01 EUR |
| 500+ | 1.61 EUR |
| 1000+ | 1.48 EUR |
| FDS3572 |
|
Hersteller: onsemi
MOSFETs 80V N-Channel PowerTrench
MOSFETs 80V N-Channel PowerTrench
auf Bestellung 2017 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.61 EUR |
| 10+ | 2.98 EUR |
| 100+ | 2.03 EUR |
| FDS3572 |
|
Hersteller: ON Semiconductor / Fairchild
MOSFET 80V N-Channel PowerTrench
MOSFET 80V N-Channel PowerTrench
auf Bestellung 3795 Stücke:
Lieferzeit 10-14 Tag (e)