FDS3572 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 80V 8.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.71 EUR |
| 5000+ | 1.64 EUR |
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Technische Details FDS3572 onsemi
Description: MOSFET N-CH 80V 8.9A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 8.9A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V.
Weitere Produktangebote FDS3572 nach Preis ab 0.84 EUR bis 3.87 EUR
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FDS3572 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 8.9A 8-Pin SOIC T/R |
auf Bestellung 1857 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS3572 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 8.9A 8-Pin SOIC T/R |
auf Bestellung 1857 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS3572 | Hersteller : onsemi |
Description: MOSFET N-CH 80V 8.9A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 8.9A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V |
auf Bestellung 7070 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS3572 | Hersteller : onsemi / Fairchild |
MOSFET 80V N-Channel PowerTrench |
auf Bestellung 4084 Stücke: Lieferzeit 14-28 Tag (e) |
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FDS3572 | Hersteller : ON Semiconductor / Fairchild |
MOSFET 80V N-Channel PowerTrench |
auf Bestellung 3795 Stücke: Lieferzeit 14-28 Tag (e) |
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FDS3572 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 8.9A 8-Pin SOIC T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS3572 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 8.9A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS3572 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 8.9A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS3572 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 5.6A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 5.6A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDS3572 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 5.6A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 5.6A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |