FDS3580 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 80V 7.6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 7.6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.94 EUR |
| 5000+ | 0.89 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDS3580 onsemi
Description: MOSFET N-CH 80V 7.6A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), Rds On (Max) @ Id, Vgs: 29mOhm @ 7.6A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V.
Weitere Produktangebote FDS3580 nach Preis ab 0.92 EUR bis 3.29 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDS3580 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 7.6A 8-Pin SOIC T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
FDS3580 | Hersteller : onsemi / Fairchild |
MOSFETs SO-8 N-CH 80V |
auf Bestellung 1879 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FDS3580 | Hersteller : onsemi |
Description: MOSFET N-CH 80V 7.6A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 7.6A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
auf Bestellung 9297 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FDS3580 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 7.6A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
FDS3580 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 7.6A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
FDS3580 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 7.6A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| FDS3580 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 7.6A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
| FDS3580 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 50A; 2.5W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement Gate charge: 34nC On-state resistance: 29mΩ Power dissipation: 2.5W Drain current: 7.6A Gate-source voltage: ±20V Pulsed drain current: 50A Drain-source voltage: 80V |
Produkt ist nicht verfügbar |