FDS4465_SN00187 onsemi
Hersteller: onsemi
Description: MOSFET P-CHANNEL 20V 13.5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 8237 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 4.5 V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.5A
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.2W
Produktrezensionen
Produktbewertung abgeben
Technische Details FDS4465_SN00187 onsemi
Description: MOSFET P-CHANNEL 20V 13.5A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 8237 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 4.5 V, Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 13.5A, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 1.2W.