FDS6575 onsemi
Hersteller: onsemi
Description: MOSFET P-CH 20V 10A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 4951 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Technische Details FDS6575 onsemi
Description: MOSFET P-CH 20V 10A 8SOIC, Input Capacitance (Ciss) (Max) @ Vds: 4951 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote FDS6575 nach Preis ab 0.89 EUR bis 2.6 EUR
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FDS6575 | onsemi |
Description: MOSFET P-CH 20V 10A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4951 pF @ 10 V |
auf Bestellung 11678 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS6575 | onsemi / Fairchild |
MOSFETs SO-8 P-CH -20V |
auf Bestellung 3051 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDS6575 |
|
Hersteller: onsemi
Description: MOSFET P-CH 20V 10A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4951 pF @ 10 V
Description: MOSFET P-CH 20V 10A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4951 pF @ 10 V
auf Bestellung 11678 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.24 EUR |
| 10+ | 1.82 EUR |
| 100+ | 1.42 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 0.98 EUR |
| FDS6575 |
|
Hersteller: onsemi / Fairchild
MOSFETs SO-8 P-CH -20V
MOSFETs SO-8 P-CH -20V
auf Bestellung 3051 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.6 EUR |
| 10+ | 2.08 EUR |
| 100+ | 1.41 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 1.02 EUR |
| 2500+ | 0.92 EUR |
| 5000+ | 0.89 EUR |