auf Bestellung 924 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 130+ | 1.13 EUR |
| 131+ | 1.08 EUR |
| 190+ | 0.72 EUR |
| 250+ | 0.68 EUR |
| 500+ | 0.49 EUR |
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Technische Details FDS6670A ON Semiconductor
Description: MOSFET N-CH 30V 13A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V.
Weitere Produktangebote FDS6670A nach Preis ab 0.47 EUR bis 1.71 EUR
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FDS6670A | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R |
auf Bestellung 924 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS6670A | Hersteller : onsemi |
Description: MOSFET N-CH 30V 13A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V |
auf Bestellung 1178 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS6670A | Hersteller : onsemi / Fairchild |
MOSFETs SO-8 N-CH 30V |
auf Bestellung 6399 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS6670A | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS6670A | Hersteller : ONSEMI |
Description: ONSEMI - FDS6670A - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 108108 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDS6670A | Hersteller : Fairchild |
Transistor N-Channel MOSFET; 30V; 20V; 14mOhm; 13A; 2,5W; -55°C ~ 150°C; FDS6670A TFDS6670a Anzahl je Verpackung: 25 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS6670A | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS6670A | Hersteller : onsemi |
Description: MOSFET N-CH 30V 13A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V |
Produkt ist nicht verfügbar |