FDS6673BZ onsemi
Hersteller: onsemiDescription: MOSFET P-CH 30V 14.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
auf Bestellung 25000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.25 EUR |
| 5000+ | 1.19 EUR |
| 12500+ | 1.14 EUR |
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Technische Details FDS6673BZ onsemi
Description: MOSFET P-CH 30V 14.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14.5A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V.
Weitere Produktangebote FDS6673BZ nach Preis ab 1.31 EUR bis 3.02 EUR
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FDS6673BZ | Hersteller : onsemi / Fairchild |
MOSFET -30V P-Channel PowerTrench MOSFET |
auf Bestellung 3256 Stücke: Lieferzeit 14-28 Tag (e) |
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FDS6673BZ | Hersteller : onsemi |
Description: MOSFET P-CH 30V 14.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14.5A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V |
auf Bestellung 25444 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS6673BZ | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 30V 14.5A 8-Pin SOIC T/R |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS6673BZ | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 30V 14.5A 8-Pin SOIC T/R |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDS6673BZ | Hersteller : ON-Semicoductor |
Transistor P-Channel MOSFET; 30V; 25V; 12mOhm; 14,5A; 2,5W; -55°C ~ 150°C; FDS6673BZ TFDS6673bz Anzahl je Verpackung: 10 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS6673BZ Produktcode: 109121 |
Hersteller : Fairchild |
Transistoren > Transistoren P-Kanal-Feld |
Produkt ist nicht verfügbar
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FDS6673BZ | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 30V 14.5A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS6673BZ | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 30V 14.5A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS6673BZ | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -14.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 12mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDS6673BZ | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -14.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 12mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |