FDS6673BZ Fairchild
Produktcode: 109121
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Lieblingsprodukt
Hersteller: Fairchild
Transistoren > Transistoren P-Kanal-Feld
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Technische Details FDS6673BZ Fairchild
- Transistor
- Transistor Polarity:P Channel
- Continuous Drain Current, Id:14.5mA
- Drain Source Voltage, Vds:30V
- On Resistance, Rds(on):0.0078ohm
- Rds(on) Test Voltage, Vgs:10V
- Threshold Voltage, Vgs Typ:1.9V
Weitere Produktangebote FDS6673BZ nach Preis ab 0.63 EUR bis 2.66 EUR
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FDS6673BZ | Hersteller : onsemi |
Description: MOSFET P-CH 30V 14.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14.5A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS6673BZ | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 30V 14.5A 8-Pin SOIC T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS6673BZ | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -14.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 12mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1792 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS6673BZ | Hersteller : ON-Semiconductor |
Transistor P-Channel MOSFET; 30V; 25V; 12mOhm; 14,5A; 2,5W; -55°C ~ 150°C; FDS6673BZ TFDS6673bz Anzahl je Verpackung: 10 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS6673BZ | Hersteller : onsemi |
MOSFETs -30V P-Channel PowerTrench MOSFET |
auf Bestellung 7710 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS6673BZ | Hersteller : onsemi |
Description: MOSFET P-CH 30V 14.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14.5A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V |
auf Bestellung 7810 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS6673BZ | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 30V 14.5A 8-Pin SOIC T/R |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS6673BZ | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 30V 14.5A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |