FDS6680A-NBBI005A onsemi
Hersteller: onsemi
Description: SINGLE N-CHANNEL, LOGIC LEVEL, P
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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Technische Details FDS6680A-NBBI005A onsemi
Description: SINGLE N-CHANNEL, LOGIC LEVEL, P, Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Bulk.