
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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2500+ | 0.56 EUR |
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Technische Details FDS6898A ON Semiconductor
Description: MOSFET 2N-CH 20V 9.4A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 9.4A, Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V, Rds On (Max) @ Id, Vgs: 14mOhm @ 9.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote FDS6898A nach Preis ab 0.67 EUR bis 2.75 EUR
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FDS6898A | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.4A Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 9.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 17500 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS6898A | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.4A; 2W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel; tape On-state resistance: 21mΩ Gate charge: 23nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±12V Drain-source voltage: 20V Drain current: 9.4A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2287 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS6898A | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.4A; 2W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel; tape On-state resistance: 21mΩ Gate charge: 23nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±12V Drain-source voltage: 20V Drain current: 9.4A |
auf Bestellung 2287 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS6898A | Hersteller : onsemi / Fairchild |
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auf Bestellung 18004 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS6898A | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.4A Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 9.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 19890 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS6898A | Hersteller : ONSEMI |
![]() tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 4828 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS6898A | Hersteller : Fairchild |
![]() Anzahl je Verpackung: 100 Stücke |
auf Bestellung 180 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS6898A | Hersteller : Fairchild/ON Semiconductor |
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auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS6898A Produktcode: 46542
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FDS6898A | Hersteller : ON Semiconductor |
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FDS6898A | Hersteller : ON Semiconductor |
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FDS6898A | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |