auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 147+ | 1.06 EUR |
| 149+ | 1.02 EUR |
| 202+ | 0.72 EUR |
| 250+ | 0.67 EUR |
| 500+ | 0.38 EUR |
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Technische Details FDS6912A ON Semiconductor
Description: MOSFET 2N-CH 30V 6A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6A, Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V, Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote FDS6912A nach Preis ab 0.36 EUR bis 1.98 EUR
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FDS6912A | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 30V 6A 8-Pin SOIC T/R |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS6912A | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 6A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 1523 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS6912A | Hersteller : onsemi / Fairchild |
MOSFET SO-8 DUAL N-CH 30V |
auf Bestellung 5907 Stücke: Lieferzeit 14-28 Tag (e) |
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| FDS6912A | Hersteller : ON-Semicoductor |
Transistor 2xN-Channel MOSFET; 30V; 20V; 44mOhm; 6A; 1,6W; -55°C ~ 150°C; FDS6912A TFDS6912a Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS6912A Produktcode: 148756 |
Verschiedene Bauteile > Other components 3 |
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FDS6912A | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 6A 8-Pin SOIC T/R |
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FDS6912A | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 6A 8-Pin SOIC T/R |
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FDS6912A | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 6A; 1.6W; SO8 Case: SO8 Polarisation: unipolar Mounting: SMD Power dissipation: 1.6W Gate charge: 8.1nC Technology: PowerTrench® Features of semiconductor devices: logic level Drain current: 6A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 28mΩ Anzahl je Verpackung: 1 Stücke |
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FDS6912A | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 6A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
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FDS6912A | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 6A; 1.6W; SO8 Case: SO8 Polarisation: unipolar Mounting: SMD Power dissipation: 1.6W Gate charge: 8.1nC Technology: PowerTrench® Features of semiconductor devices: logic level Drain current: 6A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 28mΩ |
Produkt ist nicht verfügbar |