
FDS6930B onsemi / Fairchild
auf Bestellung 96 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3+ | 1.32 EUR |
10+ | 0.91 EUR |
100+ | 0.75 EUR |
250+ | 0.68 EUR |
500+ | 0.59 EUR |
1000+ | 0.47 EUR |
2500+ | 0.36 EUR |
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Technische Details FDS6930B onsemi / Fairchild
Description: MOSFET 2N-CH 30V 5.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.5A, Input Capacitance (Ciss) (Max) @ Vds: 412pF @ 15V, Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote FDS6930B nach Preis ab 0.41 EUR bis 0.64 EUR
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FDS6930B | Hersteller : ON Semiconductor |
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auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS6930B | Hersteller : ONSEMI |
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auf Bestellung 2371 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS6930B Produktcode: 118461
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FDS6930B | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FDS6930B | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FDS6930B | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A Input Capacitance (Ciss) (Max) @ Vds: 412pF @ 15V Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
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FDS6930B | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A Input Capacitance (Ciss) (Max) @ Vds: 412pF @ 15V Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |