FDS6930B ONSEMI
Hersteller: ONSEMICategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.5A; 2W; SO8
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 5.5A
On-state resistance: 62mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 3.8nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
auf Bestellung 2434 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 118+ | 0.61 EUR |
| 123+ | 0.58 EUR |
| 166+ | 0.43 EUR |
| 175+ | 0.41 EUR |
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Technische Details FDS6930B ONSEMI
Description: MOSFET 2N-CH 30V 5.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.5A, Input Capacitance (Ciss) (Max) @ Vds: 412pF @ 15V, Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote FDS6930B nach Preis ab 0.41 EUR bis 1.55 EUR
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FDS6930B | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.5A; 2W; SO8 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 5.5A On-state resistance: 62mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2W Polarisation: unipolar Gate charge: 3.8nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SO8 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2434 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS6930B | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 5.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A Input Capacitance (Ciss) (Max) @ Vds: 412pF @ 15V Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 980 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS6930B | Hersteller : onsemi / Fairchild |
MOSFET SO8 DUAL NCH LOGIC level POWER TRENCH |
auf Bestellung 31934 Stücke: Lieferzeit 14-28 Tag (e) |
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FDS6930B | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 5.5A 8-Pin SOIC T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS6930B Produktcode: 118461 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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FDS6930B | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 5.5A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS6930B | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 5.5A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS6930B | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 5.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A Input Capacitance (Ciss) (Max) @ Vds: 412pF @ 15V Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |