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FDS6982AS_G

FDS6982AS_G onsemi


Hersteller: onsemi
Description: MOSFET 2N-CH 30V 6.3A/8.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1250pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6.3A, 10V, 13.5mOhm @ 8.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V, 16nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
Supplier Device Package: 8-SO
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Technische Details FDS6982AS_G onsemi

Description: MOSFET 2N-CH 30V 6.3A/8.6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A, Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1250pF @ 10V, Rds On (Max) @ Id, Vgs: 28mOhm @ 6.3A, 10V, 13.5mOhm @ 8.6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V, 16nC @ 5V, Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA, Supplier Device Package: 8-SO.

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FDS6982AS_G Hersteller : onsemi onsemi
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Im Einkaufswagen  Stück im Wert von  UAH
FDS6982AS-G Hersteller : onsemi onsemi
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH