FDS6982AS

Hersteller: Fairchild/ON Semiconductor
Сдвоенные N -канальные ПТ, Id = 6,6 A, Ptot, Вт = 2, Udss, В = 20,... Транзистори Корпус: SO-8 Од. вим: шт
Anzahl je Verpackung: 1 Stücke

Hersteller: ONS/FAI
MOSFET N-CH DUAL 30V SO-8 Транзистори

Hersteller: onsemi
Description: MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)

Hersteller: onsemi
Description: MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)

Hersteller: onsemi / Fairchild
MOSFET SO-8 N-CH 1&2 30V