FDS6986AS_SN00192 onsemi
Hersteller: onsemi
Description: MOSFET 2 N-CH 30V 6.5A/7.9A 8SO
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V, 8nC @ 5V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.5A, 10V, 20mOhm @ 7.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V, 550pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 7.9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Produktrezensionen
Produktbewertung abgeben
Technische Details FDS6986AS_SN00192 onsemi
Description: MOSFET 2 N-CH 30V 6.5A/7.9A 8SO, Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Part Status: Obsolete, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V, 8nC @ 5V, Rds On (Max) @ Id, Vgs: 29mOhm @ 6.5A, 10V, 20mOhm @ 7.9A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V, 550pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 6.5A, 7.9A, Drain to Source Voltage (Vdss): 30V, Power - Max: 900mW, Technology: MOSFET (Metal Oxide).