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FDS86240 onsemi


fds86240-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 150V 7.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 75 V
auf Bestellung 12500 Stücke:

Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+2.17 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDS86240 onsemi

Description: MOSFET N-CH 150V 7.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), Rds On (Max) @ Id, Vgs: 19.8mOhm @ 7.5A, 10V, Power Dissipation (Max): 2.5W (Ta), 5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 75 V.

Weitere Produktangebote FDS86240 nach Preis ab 2.2 EUR bis 4.75 EUR

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FDS86240 FDS86240 onsemi / Fairchild FDS86240_D-1808526.pdf MOSFETs 150V N-Channel PowerTrench MOSFET
auf Bestellung 16081 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.63 EUR
10+3.61 EUR
25+3.59 EUR
100+2.62 EUR
500+2.25 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDS86240 FDS86240 onsemi fds86240-d.pdf Description: MOSFET N-CH 150V 7.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 75 V
auf Bestellung 14802 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.75 EUR
10+3.7 EUR
100+2.69 EUR
500+2.31 EUR
1000+2.2 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FDS86240 FDS86240_D-1808526.pdf
Hersteller: onsemi / Fairchild
MOSFETs 150V N-Channel PowerTrench MOSFET
auf Bestellung 16081 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+4.63 EUR
10+3.61 EUR
25+3.59 EUR
100+2.62 EUR
500+2.25 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDS86240 fds86240-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 150V 7.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 75 V
auf Bestellung 14802 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.75 EUR
10+3.7 EUR
100+2.69 EUR
500+2.31 EUR
1000+2.2 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH