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Technische Details FDS86240 ON Semiconductor
Description: ONSEMI - FDS86240 - Leistungs-MOSFET, n-Kanal, 150 V, 7.5 A, 0.0173 ohm, SOIC, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 150V, rohsCompliant: YES, Dauer-Drainstrom Id: 7.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2.7V, euEccn: NLR, Verlustleistung: 5W, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.0173ohm, SVHC: No SVHC (27-Jun-2024).
Weitere Produktangebote FDS86240 nach Preis ab 2.31 EUR bis 7.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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FDS86240 | ON Semiconductor |
 Trans MOSFET N-CH 150V 7.5A 8-Pin SOIC T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS86240 | onsemi |
Description: MOSFET N-CH 150V 7.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 19.8mOhm @ 7.5A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 75 V |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS86240 | ON Semiconductor |
Trans MOSFET N-CH 150V 7.5A 8-Pin SOIC T/R |
auf Bestellung 2250 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS86240 | onsemi / Fairchild |
MOSFETs 150V N-Channel PowerTrench MOSFET |
auf Bestellung 16081 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS86240 | onsemi |
Description: MOSFET N-CH 150V 7.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 19.8mOhm @ 7.5A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 75 V |
auf Bestellung 14802 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS86240 | ONSEMI |
Description: ONSEMI - FDS86240 - Leistungs-MOSFET, n-Kanal, 150 V, 7.5 A, 0.0173 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 7.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.7V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0173ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDS86240 | Aptina Imaging |
Trans MOSFET N-CH 150V 7.5A 8-Pin SOIC T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDS86240 |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 150V 7.5A 8-Pin SOIC T/R
Trans MOSFET N-CH 150V 7.5A 8-Pin SOIC T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.37 EUR |
| FDS86240 |
|
Hersteller: onsemi
Description: MOSFET N-CH 150V 7.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 75 V
Description: MOSFET N-CH 150V 7.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 75 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.58 EUR |
| FDS86240 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 150V 7.5A 8-Pin SOIC T/R
Trans MOSFET N-CH 150V 7.5A 8-Pin SOIC T/R
auf Bestellung 2250 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 3.52 EUR |
| 500+ | 3.18 EUR |
| 1000+ | 3.03 EUR |
| FDS86240 |
|
Hersteller: onsemi / Fairchild
MOSFETs 150V N-Channel PowerTrench MOSFET
MOSFETs 150V N-Channel PowerTrench MOSFET
auf Bestellung 16081 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.51 EUR |
| 10+ | 4.3 EUR |
| 25+ | 4.27 EUR |
| 100+ | 3.12 EUR |
| 500+ | 2.68 EUR |
| FDS86240 |
|
Hersteller: onsemi
Description: MOSFET N-CH 150V 7.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 75 V
Description: MOSFET N-CH 150V 7.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 75 V
auf Bestellung 14802 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.65 EUR |
| 10+ | 4.4 EUR |
| 100+ | 3.2 EUR |
| 500+ | 2.75 EUR |
| 1000+ | 2.62 EUR |
| FDS86240 |
|
Hersteller: ONSEMI
Description: ONSEMI - FDS86240 - Leistungs-MOSFET, n-Kanal, 150 V, 7.5 A, 0.0173 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 150V
rohsCompliant: YES
Dauer-Drainstrom Id: 7.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.7V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0173ohm
SVHC: No SVHC (27-Jun-2024)
Description: ONSEMI - FDS86240 - Leistungs-MOSFET, n-Kanal, 150 V, 7.5 A, 0.0173 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 150V
rohsCompliant: YES
Dauer-Drainstrom Id: 7.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.7V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0173ohm
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 36+ | 7.12 EUR |
| 45+ | 5.18 EUR |
| FDS86240 |
|
Hersteller: Aptina Imaging
Trans MOSFET N-CH 150V 7.5A 8-Pin SOIC T/R
Trans MOSFET N-CH 150V 7.5A 8-Pin SOIC T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.31 EUR |